2SC5827 silicon npn epitaxial vhf/uhf wide band amplifier ade?208?1464(z) rev.0 nov. 2001 features ? super compact package: mfpak (1.4 x 0.8 x 0.59 mm) outline mfpak 1. emitter 2. base 3. collector 1 3 2 note: marking is ?ww??.
2SC5827 rev.0, nov. 2001, page 2 of 10 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 5.5 v emitter to base voltage v ebo 1.5 v collector current i c 80 ma collector power dissipation pc 80 mw junction temperature tj 150 c storage temperature tstg ? 55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 15 ?? vi c = 10 a, i e = 0 collector cutoff current i cbo ?? 0.1 av cb = 15 v, i e = 0 collector cutoff current i ceo ?? 1 av ce = 5.5 v, r be = infinite emitter cutoff current i ebo ?? 0.1 av eb = 1.5 v, i c = 0 dc current transfer ratio h fe 100 120 150 ? v ce = 1 v, i c = 5 ma collector output capacitance c ob ? 0.85 1.15 pf v cb = 1 v, i e = 0, f = 1 mhz gain bandwidth product f t 1.5 4.5 ? ghz v ce = 1 v, i c = 5 ma power gain pg 10.5 13.5 ? db v ce = 1 v, i c = 5 ma, f = 900 mhz noise figure nf ? 1.1 1.8 db v ce = 1 v, i c = 5 ma, f = 900 mhz
2SC5827 rev.0, nov. 2001, page 3 of 10 100 80 60 40 20 0 50 100 150 200 250 collector power dissipation p c (mw) ambient temperature ta ( c) collector power dissipation curve 20 16 12 8 4 0123456 collector to emitter voltage v ce (v) collector current i c (ma) typical output characteristics 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 base to emitter voltage v be (v) collector current i c (ma) typical transfer characteristics 200 100 0 0.1 1.0 10 100 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current i b = 20 a 40 a 60 a 80 a 100 a 120 a 140 a 160 a v ce = 1 v v ce = 1 v
2SC5827 rev.0, nov. 2001, page 4 of 10 2.0 1.6 1.2 0.8 0.4 0 0.5 1.0 1.5 2.0 2.5 3.0 collector to base voltage v cb (v) collector output capacitance cob (pf) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 collector to base voltage v cb (v) reverse transfer capacitance c re (pf) collector output capacitance vs. collector to base voltage reverse transfer capacitance vs. collector to base voltage 20 16 12 8 4 0 1 2 5 10 20 50 100 collector current i c (ma) gain bandwidth product f t (ghz) 20 16 12 8 4 0 1 2 5 10 20 50 100 collector current i c (ma) s 21 parameter |s 21 | 2 (db) gain bandwidth product vs. collector current s 21 parameter vs. collector current v ce = 1 v f = 1 ghz v ce = 1 v f = 1 ghz i e = 0 f = 1 mhz emitter ground f = 1 mhz
2SC5827 rev.0, nov. 2001, page 5 of 10 20 16 12 8 4 0 1 2 5 10 20 50 100 collector current i c (ma) power gain pg (db) 5 4 3 2 1 0 1 2 5 10 20 50 100 collector current i c (ma) noise figure nf (db) power gain vs. collector current noise figure vs. collector current v ce = 1 v f = 900 mhz v ce = 1 v f = 900 mhz
2SC5827 rev.0, nov. 2001, page 6 of 10 scale: 8 / div. s 11 parameter vs. frequency s 21 parameter vs. frequency test conditions: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) (i c = 5 ma) (i c = 20 ma) test conditions: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) (i c = 5 ma) (i c = 20 ma) scale: 0.06 / div. s 12 parameter vs. frequency test conditions: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) (i c = 5 ma) (i c = 20 ma) s 22 parameter vs. frequency test conditions: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) (i c = 5 ma) (i c = 20 ma) 0 30 ?30 ?60 ?90 ?120 ?150 180 60 90 120 150 0 30 ?30 ?60 ?90 ?120 ?150 180 60 90 120 150 .2 .4 .6 1 2 5 ?10 ?5 ?3 ?2 ?1.5 10 5 3 2 1.5 ?1 ?.8 ?.6 ?.4 ?.2 0 .2 .4 .6 .8 1 4 ?4 3 4 .8 1.5 .2 .4 .6 1 2 5 ?10 ?5 ?3 ?2 ?1.5 10 5 3 2 1.5 ?1 ?.8 ?.6 ?.4 ?.2 0 .2 .4 .6 .8 1 4 ?4 3 4 .8 1.5
2SC5827 rev.0, nov. 2001, page 7 of 10 s parameter (v ce = 1 v, i c = 5 ma, z o = 50 ? ) s11 s21 s12 s22 f(mhz) mag ang mag ang mag ang mag ang 100 0.820 ?35.7 15.31 156.5 0.027 71.2 0.923 ?18.5 200 0.738 ?66.6 12.89 137.3 0.045 58.1 0.786 ?31.0 300 0.679 ?90.5 10.54 123.8 0.056 50.0 0.661 ?38.8 400 0.622 ?107.1 8.65 114.2 0.062 45.9 0.572 ?42.8 500 0.600 ?120.6 7.30 106.9 0.066 44.7 0.510 ?45.7 600 0.579 ?130.4 6.27 101.4 0.070 45.2 0.466 ?47.1 700 0.567 ?138.7 5.46 96.4 0.072 45.5 0.435 ?48.3 800 0.559 ?144.9 4.86 92.1 0.075 47.2 0.413 ?49.5 900 0.550 ?151.3 4.37 88.7 0.078 49.5 0.398 ?50.8 1000 0.553 ?155.8 3.99 85.2 0.081 51.5 0.386 ?52.2 1100 0.551 ?160.2 3.64 82.3 0.084 54.0 0.377 ?53.5 1200 0.556 ?163.5 3.36 79.0 0.089 56.7 0.371 ?55.0 1300 0.552 ?167.3 3.14 76.7 0.093 58.5 0.365 ?56.5 1400 0.554 ?170.2 2.92 74.2 0.098 60.7 0.363 ?58.4 1500 0.555 ?172.5 2.76 71.7 0.103 63.1 0.360 ?60.0 1600 0.550 ?175.8 2.58 69.3 0.108 65.2 0.361 ?62.0 1700 0.556 ?178.0 2.44 67.1 0.114 67.4 0.360 ?63.9 1800 0.552 179.7 2.32 65.0 0.122 69.0 0.361 ?66.1 1900 0.560 177.0 2.21 63.0 0.128 70.4 0.362 ?68.0 2000 0.564 175.4 2.11 60.6 0.136 71.5 0.363 ?70.4
2SC5827 rev.0, nov. 2001, page 8 of 10 (v ce = 1 v, i c = 20 ma, z o = 50 ? ) s11 s21 s12 s22 f(mhz) mag ang mag ang mag ang mag ang 100 0.499 ?78.6 36.20 135.4 0.019 63.2 0.692 ?42.1 200 0.454 ?119.0 23.22 115.0 0.028 60.0 0.454 ?58.1 300 0.445 ?137.9 16.36 104.9 0.036 62.1 0.333 ?65.1 400 0.429 ?150.0 12.55 98.8 0.043 65.5 0.269 ?68.4 500 0.434 ?157.2 10.15 94.4 0.051 67.4 0.231 ?70.5 600 0.433 ?162.2 8.51 91.1 0.059 69.4 0.206 ?72.1 700 0.435 ?167.1 7.31 88.0 0.068 70.4 0.190 ?73.4 800 0.435 ?169.6 6.41 85.2 0.076 71.6 0.180 ?75.2 900 0.432 ?173.1 5.75 82.9 0.085 72.2 0.172 ?77.0 1000 0.440 ?174.7 5.19 80.9 0.093 72.9 0.169 ?78.4 1100 0.438 ?178.1 4.74 78.5 0.102 73.3 0.167 ?80.0 1200 0.448 ?179.0 4.33 76.3 0.111 73.9 0.165 ?82.2 1300 0.440 178.9 4.05 74.7 0.119 73.4 0.165 ?84.2 1400 0.452 176.8 3.75 72.8 0.128 73.4 0.165 ?86.1 1500 0.453 175.7 3.52 71.1 0.137 73.5 0.167 ?88.0 1600 0.456 172.5 3.33 69.3 0.145 73.4 0.170 ?90.0 1700 0.460 172.2 3.13 67.1 0.154 73.4 0.172 ?91.9 1800 0.457 171.1 2.97 65.6 0.164 73.2 0.176 ?94.2 1900 0.467 168.4 2.83 64.0 0.172 72.9 0.179 ?96.3 2000 0.469 168.6 2.70 62.4 0.183 72.4 0.183 ?98.2
2SC5827 rev.0, nov. 2001, page 9 of 10 package dimensions 0.9 0.1 1.4 0.05 1.2 0.05 0.8 0.1 3-0.2 +0.1 ? 0.05 0.2 0.2 0.45 0.45 (0.1) (0.1) 0.6 max hitachi code jedec jeita mass (reference value) mfpak ? ? 0.0016 g 0.15 +0.1 ? 0.05 as of july, 2001 unit: mm
2SC5827 rev.0, nov. 2001, page 10 of 10 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0
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